|
Useful Links |
|
|
Article Details :: |
|
|
| Article Name : | | | ANALYSIS OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS | | Author Name : | | | Diwakar Nath Jha | | Publisher : | | | Ashok Yakkaldevi | | Article Series No. : | | | GRT-4498 | | Article URL : | |  | Author Profile View PDF In browser | | Abstract : | | | As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id ~ Vd curves for planer CNTFETs having different channel lengths and diameters are plotted. For the same, Id~Vd curves for different applied gate voltages are also plotted. We have then discussed the effect of diameter on the characteristic curves for a cylindrical CNTFET. Finally a brief comparison between the performance of Si–MOSFET and CNTFET is given. | | Keywords : | | |
|
|