ISSN No: 2231-5063
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Article Name :
Ion chemistry of tetramethylsilane (TMS) by electron impact
Author Name :
Sham Singh Saini And Praveen Bhatt
Publisher :
Ashok Yakkaldevi
Article Series No. :
GRT-2880
Article URL :
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Abstract :
We studied electron impact ionization of tetramethylsilane (TMS), Si(CH3)4, which is utilized in plasma polymerization applications, using a semi empirical Jain-Khare theoretical technique. Absolute partial cross sections for the formation of all fragment ions were measured by Jain-Khare method from threshold up to 120 eV. We obtained the following sixteen ions: CH3+, Si+, SiH+, SiH3+, SiCH2+, SiCH3+, HSiCH3+, H2SiCH3+, SiC2H+, SiC2H3+, SiC2H5+,Si(CH3)2+, HSi(CH3)2+, Si(CH3)3+, HSi(CH3)3+ & Si(CH3)4+. The agreement between our measured absolute partial ionization cross-sections & R.Basner et al data sets obtained by experimental technique are generally good for the silicon-containing fragment ions. The earlier work done is for 90 eV & here we have extended it up to from threshold to 120 eV.
Keywords :
  • विदेशी,
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