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| Article Name : | | | Characterization of ZnTe Thin Films Deposited at Elevated Substrate Temperatures | | Author Name : | | | J. R. Rathod,H. S. Patel,K. D. Patel,V. M. Pathak,R. Srivastava | | Publisher : | | | Ashok Yakkaldevi | | Article Series No. : | | | GRT-755 | | Article URL : | |  | Author Profile View PDF In browser | | Abstract : | | | In present investigations, Zinc telluride thin films with thickness around 6.0kÅ have been deposited by thermal evaporation method on the ultrasonically cleaned glass substrates kept at 373K temperature under the pressures of 5 10-6 torr. The thickness of the films was measured using quartz crystal thickness monitor during the deposition process. EDAX of such films yielded chemical composition by wt % of as grown ZnTe thin films around 30.60% of (Zn) and 61.50% of (Te). SEM studies revealed that ZnTe films exhibited uniformly distributed grains over the entire surface of the substrate. From the XRD analysis it was seen that the films are polycrystalline in nature with cubic structure. The grain size (246.990 Å), strain (1.4657×10-3 lines-m2), dislocation density (1.6392×1015 lines/m2), and lattice constant (6.1115 Å) were calculated in present case. The optical band gap of ZnTe thin films is evaluated using the optical absorbance spectra and it was found to be 2.30eV with direct band to band transitions. | | Keywords : | | |
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