ISSN No: 2231-5063
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Article Name :
REVERSE-BIAS LEAKAGE CURRENT MECHANISMS IN METAL /GaN SCHOTTKY DIODES
Author Name :
G. Mahaboob Basha
Publisher :
Ashok Yakkaldevi
Article Series No. :
GRT-8661
Article URL :
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Abstract :
Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunnelling (PhAT) model.
Keywords :
  • Temperature dependent, ,Diodes,leakage current, ,Reverse Bias, ,
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