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| Article Name : | | | TRANSCONDUCTANCE AND TRANSFER CHARACTERISTICS OF 8 MEV ELECTRON IRRADIATED DUAL N-CHANNEL MOSFETS | | Author Name : | | | Godwin Jacob D'' Souza | | Publisher : | | | Ashok Yakkaldevi | | Article Series No. : | | | GRT-9126 | | Article URL : | |  | Author Profile View PDF In browser | | Abstract : | | | The electrical qualities of double N-channel upgrade metal-oxide semiconductor field-impact semiconductors (MOSFETs) were modified by lighting with 8 MeV electron bar for various dosages going from 200 Gy to 1 kGy at encompassing air. | | Keywords : | | - Electron radiation, ,Transconductance, ,Transfer Characteristics, ,Si/SiO2 interface.,MOSFET, ,Radiation effect, ,
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