|
Useful Links |
|
|
Article Details :: |
|
|
| Article Name : | | | HIGH-ENERGY RADIATION EFFECTS ON SILICON NPN BIPOLAR TRANSISTOR ELECTRICAL PERFORMANCE: A STUDY WITH 1 MEV PROTON IRRADIATION | | Author Name : | | | Godwin Jacob D'' Souza | | Publisher : | | | Ashok Yakkaldevi | | Article Series No. : | | | GRT-9127 | | Article URL : | |  | Author Profile View PDF In browser | | Abstract : | | | This study explores the degradation of the silicon NPN transistor''s emitter-base junction, specifically focusing on the 2N2219A model, when subjected to both forward and reverse polarization. | | Keywords : | | - emitter-base; ,silicon transistors; ,NPN-BJTs; ,proton irradiation; ,electric performance,
|
|
|