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| Article Name : | | | IONIZING RADIATION INFLUENCE ON 28-NM MOS TRANSISTOR’S LOW-FREQUENCY NOISE CHARACTERISTICS | | Author Name : | | | Godwin Jacob D'' Souza | | Publisher : | | | Ashok Yakkaldevi | | Article Series No. : | | | GRT-9128 | | Article URL : | |  | Author Profile View PDF In browser | | Abstract : | | | In this study, we investigate changes in low-frequency noise characteristics of high-k metal-gate bulk CMOS transistors due to Total Ionizing Dose (TID) exposure. Understanding these changes is complicated by the strong bias dependence of noise characteristics, which makes it difficult to distinguish between shifts caused by effective biasing changes and those due to newly generated traps. | | Keywords : | | - Radiation damage to electronic components; ,Radiation-hard electronics; ,Analogue electronic circuits.,
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